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notes through are on page 11 www.irf.com 1 09/22/10 IRFB38N20DPBF irfs38n20dpbf irfsl38n20dpbf hexfet power mosfet d 2 pak irfs38n20dpbf to-220ab IRFB38N20DPBF to-262 irfsl38n20dpbf high frequency dc-dc converters plasma display panel benefits applications low gate-to-drain charge toreduce switching losses fully characterized capacitanceincluding effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current lead-free * r jc (end of life) for d 2 pak and to-262 = 0.50c/w. this is the maximum measured value after 1000 temperature cycles from -55 to 150c and is accounted for by the physical wearout of the die attach medium. parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 43* i d @ t c = 100c continuous drain current, v gs @ 10v 30* a i dm pulsed drain current 180 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 300* linear derating factor 2.0* w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 9.5 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbfin (1.1nm) absolute maximum ratings thermal resistance parameter typ. max. units r jc junction-to-case CCC 0.47* r cs case-to-sink, flat, greased surface 0.50 CCC c/w r ja junction-to-ambient CCC 62 r ja junction-to-ambient CCC 40 v ds 200 v v ds (avalanche) min. 260 v r ds(on) max @ 10v 54 m t j max 175 c key parameters pd - 97001c downloaded from: http:///
irfb/s/sl38n20dpbf 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 17 CCC CCC s v ds = 50v, i d = 26a q g total gate charge CCC 60 91 i d = 26a q gs gate-to-source charge CCC 17 25 nc v ds = 100v q gd gate-to-drain ("miller") charge CCC 28 42 v gs = 10v, t d(on) turn-on delay time CCC 16 CCC v dd = 100v t r rise time CCC 95 CCC i d = 26a t d(off) turn-off delay time CCC 29 CCC r g = 2.5 ? t f fall time CCC 47 CCC v gs = 10v c iss input capacitance CCC 2900 CCC v gs = 0v c oss output capacitance CCC 450 CCC v ds = 25v c rss reverse transfer capacitance CCC 73 CCC pf ? = 1.0mhz c oss output capacitance CCC 3550 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 180 CCC v gs = 0v, v ds = 160v, ? = 1.0mhz c oss eff. effective output capacitance CCC 380 CCC v gs = 0v, v ds = 0v to 160v dynamic @ t j = 25c (unless otherwise specified) ns s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source c urrent integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.5 v t j = 25c, i s = 26a, v gs = 0v t rr reverse recovery time CCC 160 240 ns t j = 25c, i f = 26a q rr reverse recoverycharge CCC 1.3 2.0 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 44 180 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.22 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.054 ? v gs = 10v, i d = 26a v gs(th) gate threshold voltage 3.0 CCC 5.0 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 200v, v gs = 0v CCC CCC 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leakage current avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj v ds (avalanche) repetitive avalanche voltage v min. typ. max. CCC CCC 460 260 CCC CCC CCC CCC 26 CCC 390 CCC downloaded from: http:///
www.irf.com 3 irfb/s/sl38n20dpbf fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 44a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 300s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 300s pulse width tj = 175c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 300s pulse width downloaded from: http:///
irfb/s/sl38n20dpbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 10203040506070 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v i d = 26a downloaded from: http:///
www.irf.com 5 irfb/s/sl38n20dpbf fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 45 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
irfb/s/sl38n20dpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 180 360 540 720 900 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 11a 19a 26a downloaded from: http:///
www.irf.com 7 irfb/s/sl38n20dpbf p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
? ? ? ! "#$$ ? % &""& ? '(!" ? )"* ? '+!" &" downloaded from: http:///
irfb/s/sl38n20dpbf 8 www.irf.com

note: "p" inas s embly line pos ition indi cates "l ead - f r ee" line c week 19 part number dat e code year 7 = 1997 as s emb led on ww 19, 1997 t his is an irf 1010 example: in the assembly line "c" lot code 1789 internat ional assembly lot code rectifier logo to-220ab packages are not recommended for surface mount application. notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
www.irf.com 9 irfb/s/sl38n20dpbf

dat e code year 0 = 2000 week 02 a = assembly site code rectifier internat ional part number p = d e s i gnat e s l e ad - f r e e product (optional) f 530s in the assembly line "l" as s e mb le d on ww 02, 2000 t his is an irf530s wit h lot code 8024 internat ional logo rectifier lot code assembly ye ar 0 = 2000 part number dat e code line l we e k 02 or f 530s logo assembly lot code

notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
irfb/s/sl38n20dpbf 10 www.irf.com to-262 part marking information to-262 package outline
logo rectifier int ernat ional lot code assembly logo rectifier international dat e code week 19 year 7 = 1997 part number a = assembly site code or product (opt ional) p = de signat es lead-f ree example: this is an irl3103l lot code 1789 as s e mb l y part number dat e code we e k 19 line c lot code year 7 = 1997 as s e mb l e d on ww 19, 1997 in t he ass embly line "c" notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
www.irf.com 11 irfb/s/sl38n20dpbf repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.3mh r g = 25 ? , i as = 26a. i sd 26a, di/dt 390a/s, v dd v (br)dss , t j 175c. pulse width 300s; duty cycle 2%.
c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . this is only applied to to-220ab package. this is applied to d 2 pak, when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994.

3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2010 downloaded from: http:///

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